A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

Ingvar Aberg; Giuliano Vescovi; Damir Asoli; Umear Naseem; James P. Gilboy; Christian Sundvall; Andreas Dahlgren; K. Erik Svensson; Nicklas Anttu; Mikael T. Bjork; Lars Samuelson

doi:10.1109/JPHOTOV.2015.2484967

A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

Ingvar Aberg^*, Giuliano Vescovi, Damir Asoli, Umear Naseem, James P. Gilboy, Christian Sundvall, Andreas Dahlgren, K. Erik Svensson, Nicklas Anttu, Mikael T. Bjork, Lars Samuelson

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Artikkeli › Tieteellinen › vertaisarvioitu

267 Sitaatiot (Scopus)

Abstrakti

A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm² was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

Alkuperäiskieli	Englanti
Artikkeli	7298402
Sivut	185-190
Sivumäärä	6
Julkaisu	IEEE Journal of Photovoltaics
Vuosikerta	6
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1109/JPHOTOV.2015.2484967
Tila	Julkaistu - tammik. 2016
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1109/JPHOTOV.2015.2484967

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title = "A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun",

abstract = "A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.",

keywords = "Diodes, gallium arsenide, nanowires, photovoltaic cells, surfaces",

author = "Ingvar Aberg and Giuliano Vescovi and Damir Asoli and Umear Naseem and Gilboy, {James P.} and Christian Sundvall and Andreas Dahlgren and Svensson, {K. Erik} and Nicklas Anttu and Bjork, {Mikael T.} and Lars Samuelson",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2016",

month = jan,

doi = "10.1109/JPHOTOV.2015.2484967",

language = "English",

volume = "6",

pages = "185--190",

journal = "IEEE Journal of Photovoltaics",

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publisher = "Institute of Electrical and Electronics Engineers",

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TY - JOUR

T1 - A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

AU - Aberg, Ingvar

AU - Vescovi, Giuliano

AU - Asoli, Damir

AU - Naseem, Umear

AU - Gilboy, James P.

AU - Sundvall, Christian

AU - Dahlgren, Andreas

AU - Svensson, K. Erik

AU - Anttu, Nicklas

AU - Bjork, Mikael T.

AU - Samuelson, Lars

PY - 2016/1

Y1 - 2016/1

N2 - A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

AB - A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

KW - Diodes

KW - gallium arsenide

KW - nanowires

KW - photovoltaic cells

KW - surfaces

UR - http://www.scopus.com/inward/record.url?scp=84944096540&partnerID=8YFLogxK

U2 - 10.1109/JPHOTOV.2015.2484967

DO - 10.1109/JPHOTOV.2015.2484967

M3 - Article

AN - SCOPUS:84944096540

SN - 2156-3381

VL - 6

SP - 185

EP - 190

JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 1

M1 - 7298402

ER -

A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

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