A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

Ingvar Aberg*, Giuliano Vescovi, Damir Asoli, Umear Naseem, James P. Gilboy, Christian Sundvall, Andreas Dahlgren, K. Erik Svensson, Nicklas Anttu, Mikael T. Bjork, Lars Samuelson

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

198 Citations (Scopus)

Abstract

A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

Original languageEnglish
Article number7298402
Pages (from-to)185-190
Number of pages6
JournalIEEE Journal of Photovoltaics
Volume6
Issue number1
DOIs
Publication statusPublished - Jan 2016
MoE publication typeA1 Journal article-refereed

Keywords

  • Diodes
  • gallium arsenide
  • nanowires
  • photovoltaic cells
  • surfaces

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