A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

Ingvar Aberg; Giuliano Vescovi; Damir Asoli; Umear Naseem; James P. Gilboy; Christian Sundvall; Andreas Dahlgren; K. Erik Svensson; Nicklas Anttu; Mikael T. Bjork; Lars Samuelson

doi:10.1109/JPHOTOV.2015.2484967

A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

Ingvar Aberg^*, Giuliano Vescovi, Damir Asoli, Umear Naseem, James P. Gilboy, Christian Sundvall, Andreas Dahlgren, K. Erik Svensson, Nicklas Anttu, Mikael T. Bjork, Lars Samuelson

^*Korresponderande författare för detta arbete

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

261 Citeringar (Scopus)

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A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm² was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

Originalspråk	Engelska
Artikelnummer	7298402
Sidor (från-till)	185-190
Antal sidor	6
Tidskrift	IEEE Journal of Photovoltaics
Volym	6
Nummer	1
DOI	https://doi.org/10.1109/JPHOTOV.2015.2484967
Status	Publicerad - jan. 2016
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

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10.1109/JPHOTOV.2015.2484967

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title = "A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun",

abstract = "A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.",

keywords = "Diodes, gallium arsenide, nanowires, photovoltaic cells, surfaces",

author = "Ingvar Aberg and Giuliano Vescovi and Damir Asoli and Umear Naseem and Gilboy, {James P.} and Christian Sundvall and Andreas Dahlgren and Svensson, {K. Erik} and Nicklas Anttu and Bjork, {Mikael T.} and Lars Samuelson",

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AU - Aberg, Ingvar

AU - Vescovi, Giuliano

AU - Asoli, Damir

AU - Naseem, Umear

AU - Gilboy, James P.

AU - Sundvall, Christian

AU - Dahlgren, Andreas

AU - Svensson, K. Erik

AU - Anttu, Nicklas

AU - Bjork, Mikael T.

AU - Samuelson, Lars

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N2 - A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

AB - A GaAs nanowire array solar cell with an independently verified solar energy conversion efficiency of 15.3% and open-circuit voltage of 0.906 V under AM1.5g solar illumination at 1-sun intensity has been fabricated. This is the highest published efficiency for nanowire array solar cells and is twice the prior record for GaAs nanowire array solar cells. The solar cell has been fabricated by substrate-based epitaxy but is structurally compatible with substrate-less aerotaxy fabrication, providing a path to high-volume manufacturing. The short-circuit current of 21.3 mA/cm2 was generated with axial p-n junction GaAs cores covering 13% of the surface area, which is a volume of GaAs equivalent to a 370-nm-thick planar layer.

KW - Diodes

KW - gallium arsenide

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KW - photovoltaic cells

KW - surfaces

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A GaAs nanowire array solar cell with 15.3% efficiency at 1 sun

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