Voltage dependent displacement current as a tool to measure the vacuum level shift caused by self-assembled monolayers on aluminum oxide

Mathias Nyman, Oskar Sandberg, Josué F. Martinez Hardigree, Srinivas Kola, Howard E. Katz, Ronald Österbacka

    Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

    5 Citeringar (Scopus)

    Sammanfattning

    We present charge extraction by a linearly increasing voltage measurements on diodes based on an n-channel naphthalenetetracarboxylic acid diimide semiconductor and an aluminum oxide blocking layer. Results show a large displacement current (roughly 15 times that expected from the geometrical capacitance), which we associate with trap filling in the oxide. The trap density is calculated to be on the order of 10(19) cm(-3), in agreement with preceding work. We present a way of using the displacement current as a tool for probing the vacuum level shift caused by modifying the oxide surface with self-assembled monolayers in operating devices. (C) 2013 AIP Publishing LLC.
    OriginalspråkOdefinierat/okänt
    Sidor (från-till)
    Antal sidor4
    TidskriftApplied Physics Letters
    Volym103
    Utgåva24
    DOI
    StatusPublicerad - 2013
    MoE-publikationstypA1 Tidskriftsartikel-refererad

    Nyckelord

    • Aluminum oxide
    • Trapping
    • Charge transport
    • CELIV

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