Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho; Himadri S. Majumdar; Jayanta K. Baral; Fredrik Jansson; Ronald Österbacka; Olli Ikkala

doi:10.1063/1.3033221

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho^*, Himadri S. Majumdar, Jayanta K. Baral, Fredrik Jansson, Ronald Österbacka, Olli Ikkala

^*Korresponderande författare för detta arbete

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Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

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The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

Originalspråk	Engelska
Artikelnummer	203309
Tidskrift	Applied Physics Letters
Volym	93
Nummer	20
DOI	https://doi.org/10.1063/1.3033221
Status	Publicerad - 2008
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

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title = "Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology",

abstract = "The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.",

author = "Ari Laiho and Majumdar, {Himadri S.} and Baral, {Jayanta K.} and Fredrik Jansson and Ronald {\"O}sterbacka and Olli Ikkala",

note = "Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Jansson, Fredrik

AU - Österbacka, Ronald

AU - Ikkala, Olli

N1 - Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

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N2 - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

AB - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

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Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

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