Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson; R. Österbacka

doi:10.1002/pssc.200777566

Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson^*, R. Österbacka

^*Korresponderande författare för detta arbete

Fysik

Forskningsoutput: Tidskriftsbidrag › Konferensartikel › Vetenskaplig › Peer review

Sammanfattning

Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

Originalspråk	Engelska
Sidor (från-till)	755-758
Antal sidor	4
Tidskrift	Physica Status Solidi (C) Current Topics in Solid State Physics
Volym	5
Nummer	3
DOI	https://doi.org/10.1002/pssc.200777566
Status	Publicerad - 2008
MoE-publikationstyp	A4 Artikel i en konferenspublikation
Evenemang	12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Tyskland Varaktighet: 6 aug. 2007 → 10 aug. 2007

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@article{93beee25efef4b649f50e7d379185195,

title = "Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model",

abstract = "Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.",

author = "F. Jansson and R. {\"O}sterbacka",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 ; Conference date: 06-08-2007 Through 10-08-2007",

year = "2008",

doi = "10.1002/pssc.200777566",

language = "English",

volume = "5",

pages = "755--758",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley",

number = "3",

}

TY - JOUR

T1 - Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

AU - Jansson, F.

AU - Österbacka, R.

PY - 2008

Y1 - 2008

N2 - Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

AB - Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

UR - http://www.scopus.com/inward/record.url?scp=77951283210&partnerID=8YFLogxK

U2 - 10.1002/pssc.200777566

DO - 10.1002/pssc.200777566

M3 - Conference article

AN - SCOPUS:77951283210

SN - 1862-6351

VL - 5

SP - 755

EP - 758

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3

T2 - 12th International Conference on Transport in Interacting Disordered Systems, TIDS 12

Y2 - 6 August 2007 through 10 August 2007

ER -

Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

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