Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson*, R. Österbacka

*Korresponderande författare för detta arbete

Forskningsoutput: TidskriftsbidragKonferensartikelVetenskapligPeer review

Sammanfattning

Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

OriginalspråkEngelska
Sidor (från-till)755-758
Antal sidor4
TidskriftPhysica Status Solidi (C) Current Topics in Solid State Physics
Volym5
Utgåva3
DOI
StatusPublicerad - 2008
MoE-publikationstypA4 Artikel i en konferenspublikation
Evenemang12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Tyskland
Varaktighet: 6 aug 200710 aug 2007

Fingeravtryck

Fördjupa i forskningsämnen för ”Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här