Sammanfattning
A new concept of organic transistors that uses ion-conducting membranes as a gate insulator was demonstrated. The Naflon 115® membrane was used for fabrication of MemFETs, and for the other membranes, PVDF films were washed in chloroform to remove surface impurities, dried, and irradiated with an electron-beam. The PVDF film was sandwiched between two over-patterned aluminum plates before irradiation for the patterned membrane. The irradiated PVDF films were grafted with either styrene or VBC. The PVDF-g-PS membranes were prepared by immersing the irradiated PVDF film in a mixture of styrene and isopropanol. Afterwards the samples were washed and extracted with chloroform. The demonstration shows that MemFET can be easily integrated with a functional device using ion-conducting membranes.
Originalspråk | Engelska |
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Sidor (från-till) | 2520-2523 |
Antal sidor | 4 |
Tidskrift | Advanced Materials |
Volym | 21 |
Nummer | 24 |
DOI | |
Status | Publicerad - 26 juni 2009 |
MoE-publikationstyp | A1 Tidskriftsartikel-refererad |