Sammanfattning
We report a simple and roll-to-roll suitable method of manufacturing low-voltage, allpolymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are "normally-on" devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.
| Originalspråk | Engelska |
|---|---|
| Sidor (från-till) | 1207-1211 |
| Antal sidor | 5 |
| Tidskrift | Organic Electronics |
| Volym | 11 |
| Nummer | 7 |
| DOI | |
| Status | Publicerad - juli 2010 |
| MoE-publikationstyp | A1 Tidskriftsartikel-refererad |
Finansiering
N.K. gratefully acknowledges Dr. Kjell-Mikael Källman and Dr. Himadri Majumdar for help with setting up the humidity chamber. Dr. Himadri Majumdar is further acknowledged for fruitful advices regarding the memory functionality. This work was done within the Finnish Funding Agency for Technology and Innovation through the FLEXSENS project. The authors acknowledge partial funding from the Academy of Finland through the National Center of Excellence program.
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