Keyphrases
Ferroelectric Memory
100%
Memory Property
100%
High-pressure Annealing
100%
Hf0.5Zr0.5O2
100%
Ferroelectric Hf0.5Zr0.5O2
60%
Subthreshold Swing
40%
Capacitors
40%
Memory Window
40%
Annealing Conditions
40%
One-transistor Dynamic Random-access Memory
40%
TCAD Tool
20%
Memory-based
20%
Landau-Khalatnikov
20%
Sentaurus TCAD
20%
Ferroelectric Characteristics
20%
ION-IOFF
20%
Connected in Series
20%
Polarization Field
20%
MOSFET
20%
Coupled System
20%
Area Ratio
20%
Material Science
Annealing
100%
Ferroelectric Material
80%
Transistor
40%
Capacitor
40%
Metal-Oxide-Semiconductor Field-Effect Transistor
20%
Engineering
Area Ratio
50%
Coupled System
50%
Metal-Oxide-Semiconductor Field-Effect Transistor
50%
Current Ratio
50%
Electric Field
50%