High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

Henrik G.O. Sandberg*, Tomas G. Bäcklund, Ronald Österbacka, Henrik Stubb

*Korresponderande författare för detta arbete

Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

105 Citeringar (Scopus)


A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.

Sidor (från-till)1112-1115
Antal sidor4
TidskriftAdvanced Materials
StatusPublicerad - 21 juli 2004
MoE-publikationstypA1 Tidskriftsartikel-refererad


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