High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

Sammanfattning

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan VR SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of 1.4 V (operating voltage: 0 to 4 V) together with a mobility of 1.9 cm2 V1 s 1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of
the dielectric (j 20.02), a low interfacial trap density (2.56 1011cm2 ), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm
OriginalspråkEngelska
TidskriftApplied Physics Letters
StatusPublicerad - 2015
MoE-publikationstypA1 Tidskriftsartikel-refererad

Fingeravtryck

Fördjupa i forskningsämnen för ”High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här