GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications

R. Sanatinia*, K. M. Awan, S. Naureen, N. Anttu, E. Ebraert, S. Anand

*Korresponderande författare för detta arbete

Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

28 Citeringar (Scopus)

Sammanfattning

We report on fabrication and optical characterization of GaAs nanopillar (NP) arrays, obtained using a combination of low-cost mask generation by self-assembled silica particles (nanosphere lithography) and dry etching. Tapered structures (conical and frustum NP arrays) are fabricated by appropriate optimization of process parameters. Significant suppression of surface reflectance is observed for both geometries over a broad wavelength range. Simulations, based on finite difference time domain (FDTD) method, show good agreement with reflectivity measurements and serve as a guideline for design of NPs and understanding their interaction with light. A combination of wet chemical etching and sulfur-based passivation of GaAs NPs, results in more than one order of magnitude enhancement in PL intensity and recovery of PL line-width, which is very promising for photovoltaic applications.

OriginalspråkEngelska
Sidor (från-till)1671-1679
Antal sidor9
TidskriftOptical Materials Express
Volym2
Utgåva11
DOI
StatusPublicerad - nov 2012
MoE-publikationstypA1 Tidskriftsartikel-refererad

Fingeravtryck

Fördjupa i forskningsämnen för ”GaAs nanopillar arrays with suppressed broadband reflectance and high optical quality for photovoltaic applications”. Tillsammans bildar de ett unikt fingeravtryck.

Citera det här