Effective temperature for hopping transport in a Gaussian DOS

F. Jansson*, S. D. Baranovskii, G. Sliaužys, R. Österbacka, P. Thomas

*Korresponderande författare för detta arbete

Forskningsoutput: TidskriftsbidragKonferensartikelVetenskapligPeer review

8 Citeringar (Scopus)

Sammanfattning

For hopping transport in disordered materials, the carrier mobility is strongly dependent on the temperature and electric field. For inorganic materials, with an exponential density of states (DOS), it has been shown earlier that both the energy distribution and the mobility of charge carriers can be described by an effective temperature Teff(T,E) dependent on the magnitude of the electric field E. We attempt to apply the same ideas to hopping transport in organic materials with a Gaussian DOS. Solving numerically the balance equation for the hopping model we show that both the energy distribution and the mobility of charge carriers can be well described by a fielddependent effective temperature. We also show that the concept of the effective temperature is applicable to description of experimental data on the carrier mobility obtained in RRa-P3HT.

OriginalspråkEngelska
Sidor (från-till)722-724
Antal sidor3
TidskriftPhysica Status Solidi (C) Current Topics in Solid State Physics
Volym5
Utgåva3
DOI
StatusPublicerad - 2008
MoE-publikationstypA4 Artikel i en konferenspublikation
Evenemang12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Tyskland
Varaktighet: 6 aug 200710 aug 2007

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