Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors

Johannes Svensson*, Nicklas Anttu, Neimantas Vainorius, B. Mattias Borg, Lars-Erik Wernersson

*Korresponderande författare för detta arbete

Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

120 Citeringar (Scopus)

Sammanfattning

Photoconductors using vertical arrays of InAs/InAs1-xSb x nanowires with varying Sb composition x have been fabricated and characterized. The spectrally resolved photocurrents are strongly diameter dependent with peaks, which are red-shifted with diameter, appearing for thicker wires. Results from numerical simulations are in good agreement with the experimental data and reveal that the peaks are due to resonant modes that enhance the coupling of light into the wires. Through proper selection of wire diameter, the absorptance can be increased by more than 1 order of magnitude at a specific wavelength compared to a thin planar film with the same amount of material. A maximum 20% cutoff wavelength of 5.7 μm is obtained at 5 K for a wire diameter of 717 nm at a Sb content of x = 0.62, but simulations predict that detection at longer wavelengths can be achieved by increasing the diameter. Furthermore, photodetection in InAsSb nanowire arrays integrated on Si substrates is also demonstrated.

OriginalspråkEngelska
Sidor (från-till)1380-1385
Antal sidor6
TidskriftNano Letters
Volym13
Utgåva4
DOI
StatusPublicerad - 2013
Externt publiceradJa
MoE-publikationstypA1 Tidskriftsartikel-refererad

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