Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films

Physics

• Capacitance 36%
• Simulation 36%
• High Pressure 36%
• Metal 27%
• Electrodes 18%
• Thin Films 18%
• Ferroelectric Material 18%
• Ferroelectricity 18%
• Electric Fields 9%
• Free Energy 9%
• Phase Transformations 9%
• Environment 9%
• Coefficients 9%
• Transients 9%
• Independent Variables 9%
• Impact 9%
• Pulses 9%
• Memory 9%
• Capacitor 9%

Material Science

• Ferroelectric Material 100%
• Thin Films 18%
• Interface Property 18%
• Devices 18%
• Polystyrene 9%
• Density 9%
• Liquid Films 9%