Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy

Terahertz spectroscopy is employed for the noncontact measurement of transversal mobility in InP nanowires, wherein photonic effects (waveguiding of excitation beam and propagation of terahertz beam in a complex gradient environment) were successfully deconvoluted. Monte Carlo calculations accounting for electron localization and heavy doping were used to determine electron momentum relaxation time corresponding to electron mobility ≥3000cm2/Vs, which is similar to that in bulk InP. The developed approach paves a way for noncontact determination of charge mobility in advanced semiconductor nanostructures.