A ring oscillator based on HIFETs

J. Koskela*, A. Kilpelä, N. Björklund, R. Österbacka

*Korresponderande författare för detta arbete

    Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

    3 Citeringar (Scopus)

    Sammanfattning

    A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

    OriginalspråkEngelska
    Sidor (från-till)84-89
    Antal sidor6
    TidskriftOrganic Electronics
    Volym13
    Utgåva1
    DOI
    StatusPublicerad - jan 2012
    MoE-publikationstypA1 Tidskriftsartikel-refererad

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