Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho; Himadri S. Majumdar; Jayanta K. Baral; Fredrik Jansson; Ronald Österbacka; Olli Ikkala

doi:10.1063/1.3033221

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho^*, Himadri S. Majumdar, Jayanta K. Baral, Fredrik Jansson, Ronald Österbacka, Olli Ikkala

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Physics

Tutkimustuotos: Lehtiartikkeli › Artikkeli › Tieteellinen › vertaisarvioitu

61 Sitaatiot (Scopus)

Abstrakti

The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

Alkuperäiskieli	Englanti
Artikkeli	203309
Julkaisu	Applied Physics Letters
Vuosikerta	93
Numero	20
DOI - pysyväislinkit	https://doi.org/10.1063/1.3033221
Tila	Julkaistu - 2008
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1063/1.3033221

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title = "Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology",

abstract = "The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.",

author = "Ari Laiho and Majumdar, {Himadri S.} and Baral, {Jayanta K.} and Fredrik Jansson and Ronald {\"O}sterbacka and Olli Ikkala",

note = "Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2008",

doi = "10.1063/1.3033221",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

AU - Laiho, Ari

AU - Majumdar, Himadri S.

AU - Baral, Jayanta K.

AU - Jansson, Fredrik

AU - Österbacka, Ronald

AU - Ikkala, Olli

N1 - Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

AB - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

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U2 - 10.1063/1.3033221

DO - 10.1063/1.3033221

M3 - Article

AN - SCOPUS:56849123232

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203309

ER -

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

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