Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson; R. Österbacka

doi:10.1002/pssc.200777566

Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson^*, R. Österbacka

^*Tämän työn vastaava kirjoittaja

Physics

Tutkimustuotos: Lehtiartikkeli › Konferenssiartikkeli › Tieteellinen › vertaisarvioitu

Abstrakti

Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

Alkuperäiskieli	Englanti
Sivut	755-758
Sivumäärä	4
Julkaisu	Physica Status Solidi (C) Current Topics in Solid State Physics
Vuosikerta	5
Numero	3
DOI - pysyväislinkit	https://doi.org/10.1002/pssc.200777566
Tila	Julkaistu - 2008
OKM-julkaisutyyppi	A4 Artikkeli konferenssijulkaisuussa
Tapahtuma	12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Germany Kesto: 6 elok. 2007 → 10 elok. 2007

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10.1002/pssc.200777566

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title = "Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model",

abstract = "Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.",

author = "F. Jansson and R. {\"O}sterbacka",

note = "Copyright: Copyright 2010 Elsevier B.V., All rights reserved.; 12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 ; Conference date: 06-08-2007 Through 10-08-2007",

year = "2008",

doi = "10.1002/pssc.200777566",

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T1 - Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

AU - Jansson, F.

AU - Österbacka, R.

PY - 2008

Y1 - 2008

N2 - Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

AB - Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

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U2 - 10.1002/pssc.200777566

DO - 10.1002/pssc.200777566

M3 - Conference article

AN - SCOPUS:77951283210

SN - 1862-6351

VL - 5

SP - 755

EP - 758

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3

T2 - 12th International Conference on Transport in Interacting Disordered Systems, TIDS 12

Y2 - 6 August 2007 through 10 August 2007

ER -

Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

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