Self-supported ion-conductive membrane-based transistors

Nikolai J. Kaihovirta, Carl Johan Wikman, Tapio Mäkelä, Carl Eric Wilén, Ronald Österbacka*

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliArtikkeliTieteellinenvertaisarvioitu

30 Sitaatiot (Scopus)

Abstrakti

A new concept of organic transistors that uses ion-conducting membranes as a gate insulator was demonstrated. The Naflon 115® membrane was used for fabrication of MemFETs, and for the other membranes, PVDF films were washed in chloroform to remove surface impurities, dried, and irradiated with an electron-beam. The PVDF film was sandwiched between two over-patterned aluminum plates before irradiation for the patterned membrane. The irradiated PVDF films were grafted with either styrene or VBC. The PVDF-g-PS membranes were prepared by immersing the irradiated PVDF film in a mixture of styrene and isopropanol. Afterwards the samples were washed and extracted with chloroform. The demonstration shows that MemFET can be easily integrated with a functional device using ion-conducting membranes.

AlkuperäiskieliEnglanti
Sivut2520-2523
Sivumäärä4
JulkaisuAdvanced Materials
Vuosikerta21
Numero24
DOI - pysyväislinkit
TilaJulkaistu - 18 kesäkuuta 2009
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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