TY - JOUR
T1 - Role of electron-hole pair formation in organic magnetoresistance
AU - Majumdar, Sayani
AU - Majumdar, Himadri S.
AU - Aarnio, Harri
AU - Vanderzande, Dirk
AU - Laiho, Reino
AU - Österbacka, Ronald
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2009/5/1
Y1 - 2009/5/1
N2 - Magnetoelectrical measurements were performed on diodes and bulk heterojunction solar cell blends (BHSCs) to clarify the role of formation of Coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin-film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to the disappearance of the MR. Our results clearly show that MR is a direct consequence of the e-h pair formation. We also found that the MR line shape follows a power-law dependence of B0.5 at higher fields.
AB - Magnetoelectrical measurements were performed on diodes and bulk heterojunction solar cell blends (BHSCs) to clarify the role of formation of Coulombically bound electron-hole (e-h) pairs on the magnetoresistance (MR) response in organic thin-film devices. BHSCs are suitable model systems because they effectively quench excitons but the probability of forming e-h pairs in them can be tuned over orders of magnitude by the choice of material and solvent in the blend. We have systematically varied the e-h recombination coefficients, which are directly proportional to the probability for the charge carriers to meet in space, and found that a reduced probability of electrons and holes meeting in space lead to the disappearance of the MR. Our results clearly show that MR is a direct consequence of the e-h pair formation. We also found that the MR line shape follows a power-law dependence of B0.5 at higher fields.
UR - http://www.scopus.com/inward/record.url?scp=65649095270&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.79.201202
DO - 10.1103/PhysRevB.79.201202
M3 - Article
AN - SCOPUS:65649095270
SN - 1098-0121
VL - 79
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 201202
ER -