TY - JOUR
T1 - Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM
AU - Yoon, Jae Seok
AU - Tewari, Amit
AU - Shin, Changhwan
AU - Jeon, Sanghun
N1 - Aff. ej till ÅA (ALG)
PY - 2019/7/1
Y1 - 2019/7/1
N2 - We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.
AB - We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.
KW - Ferroelectric films
KW - hafnium zirconium oxide
KW - high-pressure annealing
KW - metal-ferroelectric-metal
KW - nonvolatile memory
UR - https://www.mendeley.com/catalogue/f38a0b2b-9ff8-3d7c-a1ba-30219596f7fe/
U2 - 10.1109/LED.2019.2918797
DO - 10.1109/LED.2019.2918797
M3 - Article
SN - 1558-0563
VL - 40
SP - 1076
EP - 1079
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 7
ER -