Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

Eleonora Macchia; Alla Zak; Rosaria Anna Picca; Kyriaki Manoli; Cinzia Di Franco; Nicola Cioffi; Gaetano Scamarcio; Reshef Tenne; Luisa Torsi

doi:10.1557/adv.2018.311

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

Eleonora Macchia, Alla Zak, Rosaria Anna Picca, Kyriaki Manoli, Cinzia Di Franco, Nicola Cioffi, Gaetano Scamarcio, Reshef Tenne, Luisa Torsi

Tutkimustuotos: Lehtiartikkeli › Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

This work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

Alkuperäiskieli	Englanti
Sivut	1525–1533
Julkaisu	MRS Advances
Vuosikerta	3
Numero	27
DOI - pysyväislinkit	https://doi.org/10.1557/adv.2018.311
Tila	Julkaistu - 2018
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1557/adv.2018.311

https://www.cambridge.org/core/journals/mrs-advances/article/improved-performance-ptype-polymer-p3ht-ntype-nanotubes-ws2-electrolyte-gated-thinfilm-transistor/8E3B8E347DB0C8A441A0A06B48E4FFA8

Viittausmuodot

@article{ba3b44e558114f7f8035ab79c2259615,

title = "Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor",

abstract = "This work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.",

author = "Eleonora Macchia and Alla Zak and {Anna Picca}, Rosaria and Kyriaki Manoli and {Di Franco}, Cinzia and Nicola Cioffi and Gaetano Scamarcio and Reshef Tenne and Luisa Torsi",

year = "2018",

doi = "10.1557/adv.2018.311",

language = "English",

volume = "3",

pages = "1525–1533",

journal = "MRS Advances",

issn = "2059-8521",

publisher = "Cambridge University Press",

number = "27",

}

TY - JOUR

T1 - Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

AU - Macchia, Eleonora

AU - Zak, Alla

AU - Anna Picca, Rosaria

AU - Manoli, Kyriaki

AU - Di Franco, Cinzia

AU - Cioffi, Nicola

AU - Scamarcio, Gaetano

AU - Tenne, Reshef

AU - Torsi, Luisa

PY - 2018

Y1 - 2018

N2 - This work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

AB - This work decribes the enhancement of the electrical figures of merit of an Electrolyte Gated Thin-Film Transistor (EG-TFT) comprising a nanocomposite of n-type tungsten disulfide (WS2) nanotubes (NTs) dispersed in a regio-regular p-type poly(3-hexylthiophene-2,5-diyl) (P3HT) polymeric matrix. P3HT/WS2 nanocomposites loaded with different concentrations of NTs, serving as EG-TFTs electronic channel materials have been studied and the formulation has been optimized. The resulting EG-TFTs figures of merit (field-effect mobility, threshold voltage and on-off ratio) are compared with those of the device comprising a bare P3HT semiconducting layer. The optimized P3HT/WS2nanocomposite, comprising a 60% by weight of NTs, results in an improvement of all the elicited figures of merit with a striking ten-fold increase in the field-effect mobility and the on/off ratio along with a sizable enhancement of the in-water operational stability of the device.

U2 - 10.1557/adv.2018.311

DO - 10.1557/adv.2018.311

M3 - Article

SN - 2059-8521

VL - 3

SP - 1525

EP - 1533

JO - MRS Advances

JF - MRS Advances

IS - 27

ER -

Improved Performance p-type Polymer (P3HT) / n-type Nanotubes (WS2) Electrolyte Gated Thin-Film Transistor

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