High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

Tutkimustuotos: LehtiartikkeliArtikkeliTieteellinenvertaisarvioitu

9 Sitaatiot (Scopus)

Abstrakti

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan VR SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of 1.4 V (operating voltage: 0 to 4 V) together with a mobility of 1.9 cm2 V1 s 1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of
the dielectric (j 20.02), a low interfacial trap density (2.56 1011cm2 ), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm
AlkuperäiskieliEnglanti
JulkaisuApplied Physics Letters
TilaJulkaistu - 2015
OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

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