Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer.

Kaisa E. Lilja, Himadri S. Majumdar, Fredrik Pettersson, Ronald Österbacka, Timo Joutsenoja

    Tutkimustuotos: LehtiartikkeliArtikkeliTieteellinenvertaisarvioitu

    18 Sitaatiot (Scopus)

    Abstrakti

    Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.
    AlkuperäiskieliEi tiedossa
    Sivut7–10
    JulkaisuACS Applied Materials and Interfaces
    Vuosikerta3
    Numero1
    DOI - pysyväislinkit
    TilaJulkaistu - 2011
    OKM-julkaisutyyppiA1 Julkaistu artikkeli, soviteltu

    Keywords

    • printing
    • organic semiconductors
    • Instrumentation
    • interfaces

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