Effective temperature for hopping transport in a Gaussian DOS

F. Jansson*, S. D. Baranovskii, G. Sliaužys, R. Österbacka, P. Thomas

*Tämän työn vastaava kirjoittaja

Tutkimustuotos: LehtiartikkeliKonferenssiartikkeliTieteellinenvertaisarvioitu

11 Sitaatiot (Scopus)

Abstrakti

For hopping transport in disordered materials, the carrier mobility is strongly dependent on the temperature and electric field. For inorganic materials, with an exponential density of states (DOS), it has been shown earlier that both the energy distribution and the mobility of charge carriers can be described by an effective temperature Teff(T,E) dependent on the magnitude of the electric field E. We attempt to apply the same ideas to hopping transport in organic materials with a Gaussian DOS. Solving numerically the balance equation for the hopping model we show that both the energy distribution and the mobility of charge carriers can be well described by a fielddependent effective temperature. We also show that the concept of the effective temperature is applicable to description of experimental data on the carrier mobility obtained in RRa-P3HT.

AlkuperäiskieliEnglanti
Sivut722-724
Sivumäärä3
JulkaisuPhysica Status Solidi (C) Current Topics in Solid State Physics
Vuosikerta5
Numero3
DOI - pysyväislinkit
TilaJulkaistu - 2008
OKM-julkaisutyyppiA4 Artikkeli konferenssijulkaisuussa
Tapahtuma12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Germany
Kesto: 6 elok. 200710 elok. 2007

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