Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

Davide Blasi; Fabrizio Viola; Francesco Modena; Axel Luukkonen; Eleonora MacChia; Rosaria Anna Picca; Zahra Gounani; Amit Tewari; Ronald Österbacka; Mario Caironi; Zsolt M. Kovacs Vajna; Gaetano Scamarcio; Fabrizio Torricelli; Luisa Torsi

doi:10.1039/d0tc90198a

Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

Davide Blasi, Fabrizio Viola, Francesco Modena, Axel Luukkonen, Eleonora MacChia, Rosaria Anna Picca, Zahra Gounani, Amit Tewari, Ronald Österbacka, Mario Caironi, Zsolt M. Kovacs Vajna, Gaetano Scamarcio, Fabrizio Torricelli, Luisa Torsi

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Tutkimustuotos: Lehtiartikkeli › Artikkeli › Tieteellinen › vertaisarvioitu

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Correction for ‘Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors’ by Davide Blasi et al., J. Mater. Chem. C, 2020, DOI: 10.1039/d0tc03342a.

Alkuperäiskieli	Englanti
Sivut	15868
Sivumäärä	1
Julkaisu	Journal of Materials Chemistry C
Vuosikerta	8
Numero	44
DOI - pysyväislinkit	https://doi.org/10.1039/d0tc90198a
Tila	Julkaistu - 28 marrask. 2020
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1039/d0tc90198aLisenssi: CC BY

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Viittausmuodot

Blasi, D., Viola, F., Modena, F., Luukkonen, A., MacChia, E., Picca, R. A., Gounani, Z., Tewari, A., Österbacka, R., Caironi, M., Kovacs Vajna, Z. M., Scamarcio, G., Torricelli, F., & Torsi, L. (2020). Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors. Journal of Materials Chemistry C, 8(44), 15868. https://doi.org/10.1039/d0tc90198a

@article{d226b95d1f2c4774a551cb54079702e9,

title = "Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors",

abstract = "Correction for {\textquoteleft}Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors{\textquoteright} by Davide Blasi et al., J. Mater. Chem. C, 2020, DOI: 10.1039/d0tc03342a.",

author = "Davide Blasi and Fabrizio Viola and Francesco Modena and Axel Luukkonen and Eleonora MacChia and Picca, {Rosaria Anna} and Zahra Gounani and Amit Tewari and Ronald {\"O}sterbacka and Mario Caironi and {Kovacs Vajna}, {Zsolt M.} and Gaetano Scamarcio and Fabrizio Torricelli and Luisa Torsi",

year = "2020",

month = nov,

day = "28",

doi = "10.1039/d0tc90198a",

language = "English",

volume = "8",

pages = "15868",

journal = "Journal of Materials Chemistry C",

issn = "2050-7534",

publisher = "Royal Society of Chemistry",

number = "44",

}

Blasi, D, Viola, F, Modena, F, Luukkonen, A , MacChia, E, Picca, RA, Gounani, Z, Tewari, A, Österbacka, R, Caironi, M, Kovacs Vajna, ZM, Scamarcio, G, Torricelli, F & Torsi, L 2020, 'Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors', Journal of Materials Chemistry C, Vuosikerta 8, Nro 44, Sivut 15868. https://doi.org/10.1039/d0tc90198a

TY - JOUR

T1 - Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

AU - Blasi, Davide

AU - Viola, Fabrizio

AU - Modena, Francesco

AU - Luukkonen, Axel

AU - MacChia, Eleonora

AU - Picca, Rosaria Anna

AU - Gounani, Zahra

AU - Tewari, Amit

AU - Österbacka, Ronald

AU - Caironi, Mario

AU - Kovacs Vajna, Zsolt M.

AU - Scamarcio, Gaetano

AU - Torricelli, Fabrizio

AU - Torsi, Luisa

PY - 2020/11/28

Y1 - 2020/11/28

N2 - Correction for ‘Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors’ by Davide Blasi et al., J. Mater. Chem. C, 2020, DOI: 10.1039/d0tc03342a.

AB - Correction for ‘Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors’ by Davide Blasi et al., J. Mater. Chem. C, 2020, DOI: 10.1039/d0tc03342a.

UR - https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=aboakademi&SrcAuth=WosAPI&KeyUT=WOS:000590410200033&DestLinkType=FullRecord&DestApp=WOS_CPL

U2 - 10.1039/d0tc90198a

DO - 10.1039/d0tc90198a

M3 - Article

AN - SCOPUS:85096967402

SN - 2050-7534

VL - 8

SP - 15868

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 44

ER -

Correction: Printed, cost-effective and stable poly(3-hexylthiophene) electrolyte-gated field-effect transistors

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