Abstrakti
A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.
Alkuperäiskieli | Englanti |
---|---|
Sivut | 84-89 |
Sivumäärä | 6 |
Julkaisu | Organic Electronics |
Vuosikerta | 13 |
Numero | 1 |
DOI - pysyväislinkit | |
Tila | Julkaistu - tammik. 2012 |
OKM-julkaisutyyppi | A1 Julkaistu artikkeli, soviteltu |