A ring oscillator based on HIFETs

J. Koskela; A. Kilpelä; N. Björklund; R. Österbacka

doi:10.1016/j.orgel.2011.10.009

A ring oscillator based on HIFETs

J. Koskela^*, A. Kilpelä, N. Björklund, R. Österbacka

^*Tämän työn vastaava kirjoittaja

Tutkimustuotos: Lehtiartikkeli › Artikkeli › Tieteellinen › vertaisarvioitu

3 Sitaatiot (Scopus)

Abstrakti

A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

Alkuperäiskieli	Englanti
Sivut	84-89
Sivumäärä	6
Julkaisu	Organic Electronics
Vuosikerta	13
Numero	1
DOI - pysyväislinkit	https://doi.org/10.1016/j.orgel.2011.10.009
Tila	Julkaistu - tammik. 2012
OKM-julkaisutyyppi	A1 Julkaistu artikkeli, soviteltu

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10.1016/j.orgel.2011.10.009

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title = "A ring oscillator based on HIFETs",

abstract = "A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.",

keywords = "Electrolyte insulator, Field-effect transistor, Low voltage, Organic transistor, Ring oscillator, Simulation model",

author = "J. Koskela and A. Kilpel{\"a} and N. Bj{\"o}rklund and R. {\"O}sterbacka",

note = "Funding Information: This work was supported by the Finnish Funding Agency for Technology and Innovation (TEKES) through the PESEPs project and FLEXSENS. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",

year = "2012",

month = jan,

doi = "10.1016/j.orgel.2011.10.009",

language = "English",

volume = "13",

pages = "84--89",

journal = "Organic Electronics",

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T1 - A ring oscillator based on HIFETs

AU - Koskela, J.

AU - Kilpelä, A.

AU - Björklund, N.

AU - Österbacka, R.

N1 - Funding Information: This work was supported by the Finnish Funding Agency for Technology and Innovation (TEKES) through the PESEPs project and FLEXSENS. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2012/1

Y1 - 2012/1

N2 - A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

AB - A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

KW - Electrolyte insulator

KW - Field-effect transistor

KW - Low voltage

KW - Organic transistor

KW - Ring oscillator

KW - Simulation model

UR - http://www.scopus.com/inward/record.url?scp=83655192677&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2011.10.009

DO - 10.1016/j.orgel.2011.10.009

M3 - Article

AN - SCOPUS:83655192677

SN - 1566-1199

VL - 13

SP - 84

EP - 89

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

A ring oscillator based on HIFETs

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