Voltage dependent displacement current as a tool to measure the vacuum level shift caused by self-assembled monolayers on aluminum oxide

Mathias Nyman, Oskar Sandberg, Josué F. Martinez Hardigree, Srinivas Kola, Howard E. Katz, Ronald Österbacka

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)


    We present charge extraction by a linearly increasing voltage measurements on diodes based on an n-channel naphthalenetetracarboxylic acid diimide semiconductor and an aluminum oxide blocking layer. Results show a large displacement current (roughly 15 times that expected from the geometrical capacitance), which we associate with trap filling in the oxide. The trap density is calculated to be on the order of 10(19) cm(-3), in agreement with preceding work. We present a way of using the displacement current as a tool for probing the vacuum level shift caused by modifying the oxide surface with self-assembled monolayers in operating devices. (C) 2013 AIP Publishing LLC.
    Original languageUndefined/Unknown
    Pages (from-to)
    Number of pages4
    JournalApplied Physics Letters
    Issue number24
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed


    • Aluminum oxide
    • Trapping
    • Charge transport
    • CELIV

    Cite this