Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho; Himadri S. Majumdar; Jayanta K. Baral; Fredrik Jansson; Ronald Österbacka; Olli Ikkala

doi:10.1063/1.3033221

Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Ari Laiho^*, Himadri S. Majumdar, Jayanta K. Baral, Fredrik Jansson, Ronald Österbacka, Olli Ikkala

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

63 Citations (Scopus)

Abstract

The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

Original language	English
Article number	203309
Journal	Applied Physics Letters
Volume	93
Issue number	20
DOIs	https://doi.org/10.1063/1.3033221
Publication status	Published - 2008
MoE publication type	A1 Journal article-refereed

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title = "Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology",

abstract = "The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.",

author = "Ari Laiho and Majumdar, {Himadri S.} and Baral, {Jayanta K.} and Fredrik Jansson and Ronald {\"O}sterbacka and Olli Ikkala",

note = "Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Baral, Jayanta K.

AU - Jansson, Fredrik

AU - Österbacka, Ronald

AU - Ikkala, Olli

N1 - Funding Information: This work was supported as part of the TEKES FinNano program. Funding from Academy of Finland (Project Nos. 107684 and 119985) is acknowledged. The authors wish to thank Professor Janne Ruokolainen, Dr. Henrik Sandberg, and Marja Vilkman for fruitful discussions. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

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N2 - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

AB - The working principles of thin film organic memory devices remain debated and tunability has been less presented. We show that the nanostructure of [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) and polystyrene (PS) allows facile tuning of switching behavior for low PCBM concentrations upon annealing above the glass transition temperature of PS. By increasing the PCBM concentration from 2 to 6 wt %, the switching voltage from off to on state during the first voltage sweep systematically decreases. In subsequent voltage sweeps negative differential resistance effect is observed. Above ca. 7 wt %, chains of PCBM clusters couple the electrodes, which leads to Ohmic behavior.

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Tuning the electrical switching of polymer/fullerene nanocomposite thin film devices by control of morphology

Abstract

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