Simulation of double injection in a bulk heterojunction material using the Gaussian disorder model

F. Jansson*, R. Österbacka

*Corresponding author for this work

Research output: Contribution to journalConference articleScientificpeer-review

Abstract

Charge transport in a bulk heterojunction solar cell is simulated with a hopping model. Several charge carriers are simulated simultaneously, taking the Coulomb interaction between them and the recombination into account. The model is used to simulate a double injection experiment. Current transients are calculated for different applied voltages and for different recombination rates across the interface and compared to measured transients.

Original languageEnglish
Pages (from-to)755-758
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number3
DOIs
Publication statusPublished - 2008
MoE publication typeA4 Article in a conference publication
Event12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Germany
Duration: 6 Aug 200710 Aug 2007

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