Simple method for preparing of sulfur–doped graphitic carbon nitride with superior activity in CO2 photoreduction

Nataliya D. Shcherban, Svitlana M. Filonenko, Mykhailo L. Ovcharov, Andriy M. Mishura, Mykola A. Skoryk, Atte Aho, Dmitry Murzin

Research output: Contribution to journalArticleScientificpeer-review

39 Citations (Scopus)


S-doped porous carbon nitride was obtained by a simple method using melamine and sulfuric acid. The synthesized material exhibits high BET specific surface area (75 m2/g) compared to non-doped C3N4 (25 m2/g). According to X-ray photoelectron spectroscopy sulfur atoms substitute nitrogen forming C−S bonds in the structure of carbon nitride. Incorporation of sulfur into C3N4 results in a significant increase of the light absorbance intensity especially in the UV region compared to undoped sample. Synthesized S-doped carbon nitride was found to be p-type semiconductor with high catalytic activity towards photoreduction of carbon dioxide with water vapour. Doping C3N4 with sulfur increases the catalytic activity in this reaction almost tenfold.
Original languageUndefined/Unknown
Pages (from-to)4987–4993
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed


  • engineering education

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