We report a simple and roll-to-roll suitable method of manufacturing low-voltage, allpolymer electrochemical transistors (ECTs). The ECTs are built on self-supported and patterned ion conducting membranes that are tailor-made by the electron beam irradiation induced grafting technique. The redox-active poly(3,4-ethylene dioxythiophene)/poly(styrene sulfonate) (PEDOT/PSS) is then printed by flexography onto the membrane in one fabrication step. The ECTs are "normally-on" devices that operate below 2 V. We also utilize overoxidation of PEDOT in order to demonstrate write-once read many times (WORM) memory functionality in the ECT.
|Number of pages||5|
|Publication status||Published - Jul 2010|
|MoE publication type||A1 Journal article-refereed|
- Electrochemical transistor
- Organic transistor