Magnetoresistance effect in the fluctuating-valence BaSmFe2O5+w system

J. Nakamura; J. Lindén; M. Karppinen; H. Yamauchi

doi:10.1063/1.1310170

Magnetoresistance effect in the fluctuating-valence BaSmFe₂O_5+w system

J. Nakamura^*
, J. Lindén
, M. Karppinen
, H. Yamauchi

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

Abstract

The occurrence of negative magnetoresistance (MR) in semiconductive BaSmFe₂O_5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey-type transition temperature. The transition signifies the charge separation of the Fe^2.5+ fluctuating mixed valence state into high-spin Fe²⁺ and Fe_3-. The samples were ferrimagnetic with a Curie temperature of ∼ 710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.

Original language	English
Pages (from-to)	1683-1685
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	11
DOIs	https://doi.org/10.1063/1.1310170
Publication status	Published - 11 Sept 2000
MoE publication type	A1 Journal article-refereed

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10.1063/1.1310170

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title = "Magnetoresistance effect in the fluctuating-valence BaSmFe2O5+w system",

abstract = "The occurrence of negative magnetoresistance (MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey-type transition temperature. The transition signifies the charge separation of the Fe2.5+ fluctuating mixed valence state into high-spin Fe2+ and Fe3-. The samples were ferrimagnetic with a Curie temperature of ∼ 710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4\% at 7 T.",

author = "J. Nakamura and J. Lind{\'e}n and M. Karppinen and H. Yamauchi",

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T1 - Magnetoresistance effect in the fluctuating-valence BaSmFe2O5+w system

AU - Nakamura, J.

AU - Lindén, J.

AU - Karppinen, M.

AU - Yamauchi, H.

PY - 2000/9/11

Y1 - 2000/9/11

N2 - The occurrence of negative magnetoresistance (MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey-type transition temperature. The transition signifies the charge separation of the Fe2.5+ fluctuating mixed valence state into high-spin Fe2+ and Fe3-. The samples were ferrimagnetic with a Curie temperature of ∼ 710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.

AB - The occurrence of negative magnetoresistance (MR) in semiconductive BaSmFe2O5+w double-perovskite samples is demonstrated. A peak in the MR value was observed at the Verwey-type transition temperature. The transition signifies the charge separation of the Fe2.5+ fluctuating mixed valence state into high-spin Fe2+ and Fe3-. The samples were ferrimagnetic with a Curie temperature of ∼ 710 K. Upon oxidizing/reducing the samples the size of the MR peak and the temperature at which the peak occurred varied. The largest MR value observed was 1.4% at 7 T.

UR - https://www.scopus.com/pages/publications/0000012853

U2 - 10.1063/1.1310170

DO - 10.1063/1.1310170

M3 - Article

AN - SCOPUS:0000012853

SN - 0003-6951

VL - 77

SP - 1683

EP - 1685

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Magnetoresistance effect in the fluctuating-valence BaSmFe₂O_5+w system

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