Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Keyphrases

• Ferroelectric Memory 100%
• Memory Property 100%
• High-pressure Annealing 100%
• Hf0.5Zr0.5O2 100%
• Ferroelectric Hf0.5Zr0.5O2 60%
• Subthreshold Swing 40%
• Capacitors 40%
• Memory Window 40%
• Annealing Conditions 40%
• One-transistor Dynamic Random-access Memory 40%
• TCAD Tool 20%
• Memory-based 20%
• Landau-Khalatnikov 20%
• Sentaurus TCAD 20%
• Ferroelectric Characteristics 20%
• ION-IOFF 20%
• Connected in Series 20%
• Polarization Field 20%
• MOSFET 20%
• Coupled System 20%
• Area Ratio 20%

Material Science

• Annealing 100%
• Ferroelectric Material 80%
• Transistor 40%
• Capacitor 40%
• Metal-Oxide-Semiconductor Field-Effect Transistor 20%

Engineering

• Area Ratio 50%
• Coupled System 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Current Ratio 50%
• Electric Field 50%