Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Jae Seok Yoon, Amit Tewari, Changhwan Shin, Sanghun Jeon

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.
Original languageEnglish
Pages (from-to)1076-1079
Number of pages4
JournalIEEE Electron Device Letters
Volume40
Issue number7
DOIs
Publication statusPublished - 1 Jul 2019
MoE publication typeA1 Journal article-refereed

Keywords

  • Ferroelectric films
  • hafnium zirconium oxide
  • high-pressure annealing
  • metal-ferroelectric-metal
  • nonvolatile memory

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