Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Jae Seok Yoon; Amit Tewari; Changhwan Shin; Sanghun Jeon

doi:10.1109/LED.2019.2918797

Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

Jae Seok Yoon, Amit Tewari, Changhwan Shin, Sanghun Jeon

Research output: Contribution to journal › Article › Scientific › peer-review

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Abstract

We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.

Original language	English
Pages (from-to)	1076-1079
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	40
Issue number	7
DOIs	https://doi.org/10.1109/LED.2019.2918797
Publication status	Published - 1 Jul 2019
MoE publication type	A1 Journal article-refereed

Keywords

Ferroelectric films
hafnium zirconium oxide
high-pressure annealing
metal-ferroelectric-metal
nonvolatile memory

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title = "Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM",

abstract = "We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.",

keywords = "Ferroelectric films, hafnium zirconium oxide, high-pressure annealing, metal-ferroelectric-metal, nonvolatile memory",

author = "Yoon, {Jae Seok} and Amit Tewari and Changhwan Shin and Sanghun Jeon",

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doi = "10.1109/LED.2019.2918797",

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T1 - Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

AU - Yoon, Jae Seok

AU - Tewari, Amit

AU - Shin, Changhwan

AU - Jeon, Sanghun

N1 - Aff. ej till ÅA (ALG)

PY - 2019/7/1

Y1 - 2019/7/1

N2 - We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.

AB - We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau-Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio (ION/IOFF). The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8-2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.

KW - Ferroelectric films

KW - hafnium zirconium oxide

KW - high-pressure annealing

KW - metal-ferroelectric-metal

KW - nonvolatile memory

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Influence of high-pressure annealing on memory properties of Hf0.5Zr0.5O2 Based 1T-FeRAM

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