High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

Henrik G.O. Sandberg*, Tomas G. Bäcklund, Ronald Österbacka, Henrik Stubb

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

105 Citations (Scopus)


A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.

Original languageEnglish
Pages (from-to)1112-1115
Number of pages4
JournalAdvanced Materials
Issue number13
Publication statusPublished - 21 Jul 2004
MoE publication typeA1 Journal article-refereed


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