High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

Henrik G.O. Sandberg; Tomas G. Bäcklund; Ronald Österbacka; Henrik Stubb

doi:10.1002/adma.200400030

High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

Henrik G.O. Sandberg^*, Tomas G. Bäcklund, Ronald Österbacka, Henrik Stubb

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

105 Citations (Scopus)

Abstract

A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.

Original language	English
Pages (from-to)	1112-1115
Number of pages	4
Journal	Advanced Materials
Volume	16
Issue number	13
DOIs	https://doi.org/10.1002/adma.200400030
Publication status	Published - 21 Jul 2004
MoE publication type	A1 Journal article-refereed

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10.1002/adma.200400030

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abstract = "A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.",

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AU - Stubb, Henrik

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N2 - A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.

AB - A hygroscopic insulator field-effect transistor was presented with a performance, when operated in air, greatly to traditional organic devices in terms of current modulation at low voltages and turn-on voltage close to 0 V. A mechanism where the gate field modulation of the drain current was enhanced by an ionic process that occurs in the moisturized gate dielectric close to the semiconductor interface. The device was compatible with large-area low-cost fabrication procedures. Mobile negative ions in PVP moving into the PVP-RR-P3HT interface caused electrochemical doping of the semiconductor at the interface.

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High-Performance All-Polymer Transistor Utilizing a Hygroscopic Insulator

Abstract

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