High-mobility and low-operating voltage organic thin film transistor with epoxy based siloxane binder as the gate dielectric

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Abstract

This paper reports the fabrication of pentacene-based organic thin-film transistors using a dielectric material, Dynasylan VR SIVO110. The devices exhibit excellent performance characterized by a low threshold voltage of 1.4 V (operating voltage: 0 to 4 V) together with a mobility of 1.9 cm2 V1 s 1. These results are promising because it uses only a single layer of dielectric without performing any intermediate treatment. The reason is attributed to the high charge storage capacity of
the dielectric (j 20.02), a low interfacial trap density (2.56 1011cm2 ), and favorable pentacene film morphology consisting of large and interconnected grains having an average size of 234 nm
Original languageEnglish
JournalApplied Physics Letters
Publication statusPublished - 2015
MoE publication typeA1 Journal article-refereed

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