Abstract
Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.
Original language | Undefined/Unknown |
---|---|
Pages (from-to) | 7–10 |
Journal | ACS Applied Materials and Interfaces |
Volume | 3 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 |
MoE publication type | A1 Journal article-refereed |
Keywords
- printing
- organic semiconductors
- Instrumentation
- interfaces