Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer.

Kaisa E. Lilja; Himadri S. Majumdar; Fredrik Pettersson; Ronald Österbacka; Timo Joutsenoja

doi:10.1021/am1009869

Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer.

Kaisa E. Lilja, Himadri S. Majumdar, Fredrik Pettersson, Ronald Österbacka, Timo Joutsenoja

Research output: Contribution to journal › Article › Scientific › peer-review

20 Citations (Scopus)

Abstract

Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.

Original language	Undefined/Unknown
Pages (from-to)	7–10
Journal	ACS Applied Materials and Interfaces
Volume	3
Issue number	1
DOIs	https://doi.org/10.1021/am1009869
Publication status	Published - 2011
MoE publication type	A1 Journal article-refereed

Keywords

printing
organic semiconductors
Instrumentation
interfaces

Access to Document

10.1021/am1009869

http://www.ncbi.nlm.nih.gov/pubmed/21141933

Cite this

@article{17b3c3d5040f42829e2f32c3d5b93717,

title = "Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer.",

abstract = "Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.",

keywords = "printing, organic semiconductors, Instrumentation, interfaces, printing, organic semiconductors, Instrumentation, interfaces, printing, organic semiconductors, Instrumentation, interfaces",

author = "Lilja, {Kaisa E.} and Majumdar, {Himadri S.} and Fredrik Pettersson and Ronald {\"O}sterbacka and Timo Joutsenoja",

year = "2011",

doi = "10.1021/am1009869",

language = "Odefinierat/ok{\"a}nt",

volume = "3",

pages = "7–10",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "1",

}

TY - JOUR

T1 - Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer.

AU - Lilja, Kaisa E.

AU - Majumdar, Himadri S.

AU - Pettersson, Fredrik

AU - Österbacka, Ronald

AU - Joutsenoja, Timo

PY - 2011

Y1 - 2011

N2 - Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.

AB - Printed, organic diodes with a thin organic interfacial layer forming a Schottky barrier were fabricated and characterized. Experiments indicated that the thickness of the barrier layer is <10 nm. The interfacial layer reduces the reverse current of the diode by 2 orders of magnitude without significantly affecting the forward characteristics above 1 V. As a result, printed organic diodes with a rectification ratio of 5 orders of magnitude were fabricated. The diodes enable applications where low reverse currents are needed.

KW - printing

KW - organic semiconductors

KW - Instrumentation

KW - interfaces

KW - printing

KW - organic semiconductors

KW - Instrumentation

KW - interfaces

KW - printing

KW - organic semiconductors

KW - Instrumentation

KW - interfaces

U2 - 10.1021/am1009869

DO - 10.1021/am1009869

M3 - Artikel

VL - 3

SP - 7

EP - 10

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 1

ER -