Effective temperature for hopping transport in a Gaussian DOS

F. Jansson*, S. D. Baranovskii, G. Sliaužys, R. Österbacka, P. Thomas

*Corresponding author for this work

Research output: Contribution to journalConference articleScientificpeer-review

8 Citations (Scopus)

Abstract

For hopping transport in disordered materials, the carrier mobility is strongly dependent on the temperature and electric field. For inorganic materials, with an exponential density of states (DOS), it has been shown earlier that both the energy distribution and the mobility of charge carriers can be described by an effective temperature Teff(T,E) dependent on the magnitude of the electric field E. We attempt to apply the same ideas to hopping transport in organic materials with a Gaussian DOS. Solving numerically the balance equation for the hopping model we show that both the energy distribution and the mobility of charge carriers can be well described by a fielddependent effective temperature. We also show that the concept of the effective temperature is applicable to description of experimental data on the carrier mobility obtained in RRa-P3HT.

Original languageEnglish
Pages (from-to)722-724
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number3
DOIs
Publication statusPublished - 2008
MoE publication typeA4 Article in a conference publication
Event12th International Conference on Transport in Interacting Disordered Systems, TIDS 12 - Marburg, Germany
Duration: 6 Aug 200710 Aug 2007

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