Effect of the ionic-strength of the gating-solution on a bioelectronic response

Eleonora Macchia; null E.; null Manoli; null K.; null Holtzer; null B.; null Franco; C. D.; null Torricelli; null F.; null Picca; R. A.; null Palazzo; null G.; null Scamarcio; null G.; null Torsi; null L.

doi:10.1109/IWASI.2019.8791318

Effect of the ionic-strength of the gating-solution on a bioelectronic response

Eleonora Macchia, E., Manoli, K., Holtzer, B., Franco, C. D., Torricelli, F., Picca, R. A., Palazzo, G., Scamarcio, G., Torsi, L.

Research output: Chapter in Book/Conference proceeding › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, lambda(D), is 100 nm.

Original language	Undefined/Unknown
Title of host publication	2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019
Publisher	IEEE
Pages	221–223
Number of pages	3
ISBN (Print)	978-1-7281-0557-4
DOIs	https://doi.org/10.1109/IWASI.2019.8791318
Publication status	Published - 2019
MoE publication type	A4 Article in a conference publication
Event	International Workshop on Advances in Sensors and Interfaces - 8th International Workshop on Advances in Sensors and Interfaces Duration: 13 Jun 2019 → 14 Jun 2019

Conference

Conference	International Workshop on Advances in Sensors and Interfaces
Period	13/06/19 → 14/06/19

Keywords

Electrolyte-Gated Thin-Film-Transistors
Single Molecule detection with a Transistor - SiMoT

Access to Document

10.1109/IWASI.2019.8791318

http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=8782434

Cite this

@inproceedings{a35985ecb12042449bbe6aef4a49e6fe,

title = "Effect of the ionic-strength of the gating-solution on a bioelectronic response",

abstract = "Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, lambda(D), is 100 nm.",

keywords = "Electrolyte-Gated Thin-Film-Transistors, Single Molecule detection with a Transistor - SiMoT, Electrolyte-Gated Thin-Film-Transistors, Single Molecule detection with a Transistor - SiMoT, Electrolyte-Gated Thin-Film-Transistors, Single Molecule detection with a Transistor - SiMoT",

author = "Eleonora Macchia and E. and Manoli and K. and Holtzer and B. and Franco and C. D. and Torricelli and F. and Picca and R. A. and Palazzo and G. and Scamarcio and G. and Torsi and L.",

year = "2019",

doi = "10.1109/IWASI.2019.8791318",

language = "Odefinierat/ok{\"a}nt",

isbn = "978-1-7281-0557-4",

pages = "221–223",

booktitle = "2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019",

publisher = "IEEE",

note = "International Workshop on Advances in Sensors and Interfaces ; Conference date: 13-06-2019 Through 14-06-2019",

}

Macchia, E, E., Manoli, K., Holtzer, B., Franco, D., C, Torricelli, F., Picca, A., R, Palazzo, G., Scamarcio, G., Torsi & L. 2019, Effect of the ionic-strength of the gating-solution on a bioelectronic response. in 2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019. IEEE, pp. 221–223, International Workshop on Advances in Sensors and Interfaces, 13/06/19. https://doi.org/10.1109/IWASI.2019.8791318

TY - GEN

T1 - Effect of the ionic-strength of the gating-solution on a bioelectronic response

AU - Macchia, Eleonora

AU - E., null

AU - Manoli, null

AU - K., null

AU - Holtzer, null

AU - B., null

AU - Franco, null

AU - D., C.

AU - Torricelli, null

AU - F., null

AU - Picca, null

AU - A., R.

AU - Palazzo, null

AU - G., null

AU - Scamarcio, null

AU - G., null

AU - Torsi, null

AU - L., null

PY - 2019

Y1 - 2019

N2 - Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, lambda(D), is 100 nm.

AB - Bioelectronic organic transistors have been recently proposed as a disruptive wide-field label-free single-molecule biosensing technology. Key relevant for this millimetric sized electrolyte-gated field-effect-transistor is a self-assembled-monolayer attached to the gate comprising a highly-packed layer of recognition elements. Here a dedicated study of the FET sensing response as a function of the salinity of the electrolyte solution is proposed. It has been demonstrated that the device response is dramatically reduced at high ionic strength and this offer the rationale for choosing to operate the device in pure water where the Debye length, lambda(D), is 100 nm.

KW - Electrolyte-Gated Thin-Film-Transistors

KW - Single Molecule detection with a Transistor - SiMoT

KW - Electrolyte-Gated Thin-Film-Transistors

KW - Single Molecule detection with a Transistor - SiMoT

KW - Electrolyte-Gated Thin-Film-Transistors

KW - Single Molecule detection with a Transistor - SiMoT

U2 - 10.1109/IWASI.2019.8791318

DO - 10.1109/IWASI.2019.8791318

M3 - Konferensbidrag

SN - 978-1-7281-0557-4

SP - 221

EP - 223

BT - 2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019

PB - IEEE

T2 - International Workshop on Advances in Sensors and Interfaces

Y2 - 13 June 2019 through 14 June 2019

ER -