Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors

Johannes Svensson*, Nicklas Anttu, Neimantas Vainorius, B. Mattias Borg, Lars-Erik Wernersson

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

136 Citations (Scopus)


Photoconductors using vertical arrays of InAs/InAs1-xSb x nanowires with varying Sb composition x have been fabricated and characterized. The spectrally resolved photocurrents are strongly diameter dependent with peaks, which are red-shifted with diameter, appearing for thicker wires. Results from numerical simulations are in good agreement with the experimental data and reveal that the peaks are due to resonant modes that enhance the coupling of light into the wires. Through proper selection of wire diameter, the absorptance can be increased by more than 1 order of magnitude at a specific wavelength compared to a thin planar film with the same amount of material. A maximum 20% cutoff wavelength of 5.7 μm is obtained at 5 K for a wire diameter of 717 nm at a Sb content of x = 0.62, but simulations predict that detection at longer wavelengths can be achieved by increasing the diameter. Furthermore, photodetection in InAsSb nanowire arrays integrated on Si substrates is also demonstrated.

Original languageEnglish
Pages (from-to)1380-1385
Number of pages6
JournalNano Letters
Issue number4
Publication statusPublished - 2013
Externally publishedYes
MoE publication typeA1 Journal article-refereed


  • InAsSb
  • long wavelength infrared
  • Nanowires
  • photodetector
  • resonant absorption


Dive into the research topics of 'Diameter-dependent photocurrent in InAsSb nanowire infrared photodetectors'. Together they form a unique fingerprint.

Cite this