Determination of Charge-Carrier Mobility and Built-In Potential in Thin-Film
Organic M-I-M Diodes from Extraction-Current Transients

Staffan Dahlström; Oskar Sandberg; Mathias Nyman; Ronald Österbacka

doi:10.1103/PhysRevApplied.10.054019

Determination of Charge-Carrier Mobility and Built-In Potential in Thin-Film Organic M-I-M Diodes from Extraction-Current Transients

Staffan Dahlström, Oskar Sandberg, Mathias Nyman, Ronald Österbacka

Research output: Contribution to journal › Article › Scientific › peer-review

11 Citations (Scopus)

97 Downloads (Pure)

Abstract

We have extended the Charge Extraction by a Linearly Increasing Voltage (CELIV) technique for

determination of the built-in potential and the charge-carrier mobility in thin-film metal-insulator-metal

(M-I-M) diodes. The validity of the presented analytical theory is verified by drift-diffusion simulations

and experimentally demonstrated on organic solar cells. In contrast to the original CELIV theory, which

assumes a uniform charge-carrier distribution in the active layer of the device, here we derive an analytical

expression for determining the built-in potential and mobility in the case of a nonuniform charge-carrier

distribution where charges have diffused into the active layer from the contacts. The extended CELIV theory

is applicable on all thin-film M-I-M diodes, e.g., organic solar cells. Drift-diffusion simulations show

that the error for mobility estimation can be an order of magnitude if not correcting for the carrier profile.

Original language	Undefined/Unknown
Pages (from-to)	054019-1–054019-8
Journal	Physical Review Applied
Volume	10
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevApplied.10.054019
Publication status	Published - 2018
MoE publication type	A1 Journal article-refereed

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10.1103/PhysRevApplied.10.054019

PhysRevApplied.10.054019.pdfAccepted author manuscript, 769 KBLicence: CC BY

Cite this

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title = "Determination of Charge-Carrier Mobility and Built-In Potential in Thin-Film Organic M-I-M Diodes from Extraction-Current Transients",

abstract = "We have extended the Charge Extraction by a Linearly Increasing Voltage (CELIV) technique fordetermination of the built-in potential and the charge-carrier mobility in thin-film metal-insulator-metal(M-I-M) diodes. The validity of the presented analytical theory is verified by drift-diffusion simulationsand experimentally demonstrated on organic solar cells. In contrast to the original CELIV theory, whichassumes a uniform charge-carrier distribution in the active layer of the device, here we derive an analyticalexpression for determining the built-in potential and mobility in the case of a nonuniform charge-carrierdistribution where charges have diffused into the active layer from the contacts. The extended CELIV theoryis applicable on all thin-film M-I-M diodes, e.g., organic solar cells. Drift-diffusion simulations showthat the error for mobility estimation can be an order of magnitude if not correcting for the carrier profile.",

author = "Staffan Dahlstr{\"o}m and Oskar Sandberg and Mathias Nyman and Ronald {\"O}sterbacka",

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doi = "10.1103/PhysRevApplied.10.054019",

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AU - Sandberg, Oskar

AU - Nyman, Mathias

AU - Österbacka, Ronald

PY - 2018

Y1 - 2018

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AB - We have extended the Charge Extraction by a Linearly Increasing Voltage (CELIV) technique fordetermination of the built-in potential and the charge-carrier mobility in thin-film metal-insulator-metal(M-I-M) diodes. The validity of the presented analytical theory is verified by drift-diffusion simulationsand experimentally demonstrated on organic solar cells. In contrast to the original CELIV theory, whichassumes a uniform charge-carrier distribution in the active layer of the device, here we derive an analyticalexpression for determining the built-in potential and mobility in the case of a nonuniform charge-carrierdistribution where charges have diffused into the active layer from the contacts. The extended CELIV theoryis applicable on all thin-film M-I-M diodes, e.g., organic solar cells. Drift-diffusion simulations showthat the error for mobility estimation can be an order of magnitude if not correcting for the carrier profile.

U2 - 10.1103/PhysRevApplied.10.054019

DO - 10.1103/PhysRevApplied.10.054019

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