Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

Jiansheng Yang; Zhenhua Zhao; Changzeng Ding; Lianping Zhang; Xiaomei Gao; Rong Huang; Zhiyun Li; Qun Luo; Bin Fan; Qingyong Tian; Lingpeng Yan; Kunpeng Guo; Yongzhen Yang; Chang Qi Ma

doi:10.1021/acsami.4c21627

Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

Jiansheng Yang
, Zhenhua Zhao
, Changzeng Ding^*
, Lianping Zhang
, Xiaomei Gao
, Rong Huang
, Zhiyun Li
, Qun Luo
, Bin Fan
, Qingyong Tian
, Lingpeng Yan
, Kunpeng Guo
, Yongzhen Yang^*
, Chang Qi Ma^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › Scientific › peer-review

9 Citations (Scopus)

Abstract

The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs_0.05(FA_0.98MA_0.02)_0.95Pb(I_0.95Br_0.05)₃, the device efficiency increased from 21.99% to 24.02%. A similar improvement was observed for the perovskite composition Cs_0.05FA_0.82MA_0.13Pb(I_0.85Br_0.15)₃, where the device efficiency increased from 21.87% to 22.76%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs_0.05FA_0.82MA_0.13Pb(I_0.85Br_0.15)₃, the resulting cells showed improved thermal stability, maintaining 75% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.

Original language	English
Pages (from-to)	16844-16854
Number of pages	11
Journal	ACS Applied Materials and Interfaces
Volume	17
Issue number	11
DOIs	https://doi.org/10.1021/acsami.4c21627
Publication status	Published - 19 Mar 2025
MoE publication type	A1 Journal article-refereed

Funding

The authors would like to acknowledge the financial support from the National Natural Science Foundation of China (22109172, 22135001, and 22372114), the Jiangsu Science and Technology Program (BE2022021), the China Postdoctoral Science Foundation (2023T160469 and 2023M732554), and the Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering (2022SX-TD012 and 2021SX-TD012). The authors are grateful for the technical support from the Suzhou Institute of Nano-Tech and Nano-Bionics for the TOF-SIMS and XPS testing in Nano-X.

Keywords

3,4,5-trifluorophenylboronic acid
perovskite solar cells
power conversion efficiency
self-assembled monolayer
thermal stability

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Yang, J., Zhao, Z., Ding, C., Zhang, L., Gao, X., Huang, R., Li, Z., Luo, Q., Fan, B., Tian, Q., Yan, L., Guo, K., Yang, Y., & Ma, C. Q. (2025). Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells. ACS Applied Materials and Interfaces, 17(11), 16844-16854. https://doi.org/10.1021/acsami.4c21627

@article{ea53eef224004bfc8026b780af0bc945,

title = "Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells",

abstract = "The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26\%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs0.05(FA0.98MA0.02)0.95Pb(I0.95Br0.05)3, the device efficiency increased from 21.99\% to 24.02\%. A similar improvement was observed for the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, where the device efficiency increased from 21.87\% to 22.76\%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, the resulting cells showed improved thermal stability, maintaining 75\% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.",

keywords = "3,4,5-trifluorophenylboronic acid, perovskite solar cells, power conversion efficiency, self-assembled monolayer, thermal stability",

author = "Jiansheng Yang and Zhenhua Zhao and Changzeng Ding and Lianping Zhang and Xiaomei Gao and Rong Huang and Zhiyun Li and Qun Luo and Bin Fan and Qingyong Tian and Lingpeng Yan and Kunpeng Guo and Yongzhen Yang and Ma, \{Chang Qi\}",

note = "Publisher Copyright: {\textcopyright} 2025 American Chemical Society.",

year = "2025",

month = mar,

day = "19",

doi = "10.1021/acsami.4c21627",

language = "English",

volume = "17",

pages = "16844--16854",

journal = "ACS Applied Materials and Interfaces",

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TY - JOUR

T1 - Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

AU - Yang, Jiansheng

AU - Zhao, Zhenhua

AU - Ding, Changzeng

AU - Zhang, Lianping

AU - Gao, Xiaomei

AU - Huang, Rong

AU - Li, Zhiyun

AU - Luo, Qun

AU - Fan, Bin

AU - Tian, Qingyong

AU - Yan, Lingpeng

AU - Guo, Kunpeng

AU - Yang, Yongzhen

AU - Ma, Chang Qi

PY - 2025/3/19

Y1 - 2025/3/19

N2 - The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs0.05(FA0.98MA0.02)0.95Pb(I0.95Br0.05)3, the device efficiency increased from 21.99% to 24.02%. A similar improvement was observed for the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, where the device efficiency increased from 21.87% to 22.76%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, the resulting cells showed improved thermal stability, maintaining 75% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.

AB - The p-i-n type perovskite solar cells with a nickel oxide (NiOx) hole transport layer in combination with self-assembled monolayers (SAMs) have a high power conversion efficiency (PCE) of over 26%. The surface properties of the SAM layer have a significant impact on the growth and crystallization of the perovskite film. In the meanwhile, defects formed during thermal annealing at the SAM layer and the perovskite layer interface would act as charge recombination centers, decreasing device performance and stability. To address these issues, this work introduces 3,4,5-trifluorophenylboronic acid (3,4,5-3FPBA) as the interfacial modification layer to improve the buried interface properties that enable better crystallization of the perovskite film. With the 3,4,5-3FPBA layer, based on the perovskite composition Cs0.05(FA0.98MA0.02)0.95Pb(I0.95Br0.05)3, the device efficiency increased from 21.99% to 24.02%. A similar improvement was observed for the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, where the device efficiency increased from 21.87% to 22.76%. The universality of interface modification has been confirmed. In addition, based on the perovskite composition Cs0.05FA0.82MA0.13Pb(I0.85Br0.15)3, the resulting cells showed improved thermal stability, maintaining 75% of its initial efficiency after 500 h of continuous heating at 85 °C for unencapsulated devices.

KW - 3,4,5-trifluorophenylboronic acid

KW - perovskite solar cells

KW - power conversion efficiency

KW - self-assembled monolayer

KW - thermal stability

UR - https://www.scopus.com/pages/publications/105001060195

U2 - 10.1021/acsami.4c21627

DO - 10.1021/acsami.4c21627

M3 - Article

C2 - 40053836

AN - SCOPUS:105001060195

SN - 1944-8244

VL - 17

SP - 16844

EP - 16854

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 11

ER -

Buried Interface Passivation with 3,4,5-Trifluorophenylboronic Acid Enables Efficient and Stable Inverted Perovskite Solar Cells

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