A ring oscillator based on HIFETs

J. Koskela*, A. Kilpelä, N. Björklund, R. Österbacka

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

3 Citations (Scopus)

Abstract

A hygroscopic insulator field-effect transistor (HIFET) ring oscillator with three inverters was built and tested under ambient laboratory conditions. An operating voltage of -2 V was used, yielding a peak-to-peak output voltage of 1.1 V and an oscillation frequency of 28 mHz. For Spice (simulation program with integrated circuit emphasis) simulation of the HIFET circuits the measured HIFET output characteristics were fitted to a DC (direct current) model and additional measurements were made to find the magnitude of the capacitive and resistive elements in the HIFET gate structure. The results indicated that HIFETs have a good potential for use in amplifier and sensor circuit applications where high operation speed is not crucial.

Original languageEnglish
Pages (from-to)84-89
Number of pages6
JournalOrganic Electronics
Volume13
Issue number1
DOIs
Publication statusPublished - Jan 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • Electrolyte insulator
  • Field-effect transistor
  • Low voltage
  • Organic transistor
  • Ring oscillator
  • Simulation model

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