TY - GEN
T1 - A label-free immunosensor based on a graphene water-gated field-effect transistor
AU - Picca, Rosaria Anna
AU - Blasi, Davide
AU - MacChia, Eleonora
AU - Manoli, Kyriaki
AU - Di Franco, Cinzia
AU - Scamarcio, Gaetano
AU - Torricelli, Fabrizio
AU - Zurutuza, Amaia
AU - Napal, Ilargi
AU - Centeno, Alba
AU - Torsi, Luisa
N1 - Funding Information:
ACKNOWLEDGMENTS The following grants are acknowledged for partial financial support: Regione Puglia - Future in Research − BEND: Biosensori elettronici intelligenti per la diagnosi precoce di malattie neurodegenerative (B164PG8); "SiMoT: Single molecule bio-electronic smart system array for clinical testing" funded by the European Commission under H2020 program, grant #824946; MIUR PON - e-DESIGN: Combination of Design, Electronics and Multifunctional Materials for New Aesthetic Components (ARS01_01158). CSGI is also acknowledged for partial financial support.
Publisher Copyright:
© 2019 IEEE.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2019/6
Y1 - 2019/6
N2 - Electrolyte-gated graphene field-effect transistors are here proposed for biosensing applications. To this end, a label-free immunosensor based on this technology is employed for the sensitive and selective detection of IgG. Differently from the typical approach based on the bioreceptor immobilization onto a graphene layer, in this work sensitivity in the lower femtomolar range can be reached thanks to the formation of a closely packed layer of anti-IgG receptors anchored to the gold gate electrode.
AB - Electrolyte-gated graphene field-effect transistors are here proposed for biosensing applications. To this end, a label-free immunosensor based on this technology is employed for the sensitive and selective detection of IgG. Differently from the typical approach based on the bioreceptor immobilization onto a graphene layer, in this work sensitivity in the lower femtomolar range can be reached thanks to the formation of a closely packed layer of anti-IgG receptors anchored to the gold gate electrode.
KW - biosensor
KW - electrolyte-gated thin film transistor
KW - gate functionalization
KW - graphene
KW - label-free
UR - http://www.scopus.com/inward/record.url?scp=85071444466&partnerID=8YFLogxK
U2 - 10.1109/IWASI.2019.8791429
DO - 10.1109/IWASI.2019.8791429
M3 - Conference contribution
AN - SCOPUS:85071444466
T3 - Proceedings - 2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019
SP - 136
EP - 138
BT - Proceedings - 2019 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019
PB - the Institute of Electrical and Electronics Engineers, Inc.
T2 - 8th International Workshop on Advances in Sensors and Interfaces, IWASI 2019
Y2 - 13 June 2019 through 14 June 2019
ER -