Simple method for preparing of sulfur–doped graphitic carbon nitride with superior activity in CO2 photoreduction

A1 Originalartikel i en vetenskaplig tidskrift (referentgranskad)


Interna författare/redaktörer


Publikationens författare: Nataliya D. Shcherban, Svitlana M. Filonenko, Mykhailo L. Ovcharov, Andriy M. Mishura, Mykola A. Skoryk, Atte Aho, Dmitry Yu. Murzin
Publiceringsår: 2016
Tidskrift: ChemistrySelect
Volym: 1
Artikelns första sida, sidnummer: 4987
Artikelns sista sida, sidnummer: 4993
eISSN: 2365-6549


Abstrakt

S-doped porous carbon nitride was obtained by a simple method using melamine and sulfuric acid. The synthesized material exhibits high BET specific surface area (75 m2/g) compared to non-doped C3N4 (25 m2/g). According to X-ray photoelectron spectroscopy sulfur atoms substitute nitrogen forming C−S bonds in the structure of carbon nitride. Incorporation of sulfur into C3N4 results in a significant increase of the light absorbance intensity especially in the UV region compared to undoped sample. Synthesized S-doped carbon nitride was found to be p-type semiconductor with high catalytic activity towards photoreduction of carbon dioxide with water vapour. Doping C3N4 with sulfur increases the catalytic activity in this reaction almost tenfold.


Nyckelord

engineering education

Senast uppdaterad 2019-19-10 vid 02:48