Method for characterizing bulk recombination using photoinduced absorption

A1 Journal article (refereed)


Internal Authors/Editors


Publication Details

List of Authors: Nora M. Wilson, Simon Sandén, Oskar J. Sandberg, Ronald Österbacka
Publisher: AIP Publishing
Place: New York
Publication year: 2017
Journal: Journal of Applied Physics
Volume number: 121
Issue number: 9
eISSN: 1089-7550


Abstract

The influence of reaction order and trap-assisted recombination on continuous-wave photoinduced absorption measurements is clarified through analytical calculations and numerical simulations. The results reveal the characteristic influence of different trap distributions and enable distinguishing between shallow exponential and Gaussian distributions and systems dominated by direct recombination by analyzing the temperature dependence of the in-phase and quadrature signals. The identifying features are the intensity dependence of the in-phase at high intensity, PAI∝IγHI, and the frequency dependence of the quadrature at low frequency, PAQ∝ωγLF. For direct recombination, γHI and γLF are temperature independent, and for an exponential distribution, they depend on the characteristic energy Ech as γHI=1/(1+Ech/kT) and γLF=kT/Ech, while a Gaussian distribution shows γHI and γLF as functions of I and ω, respectively.


Keywords

Charge recombination, disordered semiconductors, optical measurements, Organic semiconductors, photoinduced absorption, recombination, trap-assisted recombination


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Last updated on 2019-20-08 at 06:00